advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v small package outline r ds(on) 2 surface mount device i d 450ma rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 ma i d @t a =70 ma i dm ma p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 180 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 0.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.005 continuous drain current 3 , v gs @ 10v 360 pulsed drain current 1 950 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 450 parameter rating drain-source voltage 60 halogen-free product 1 AP2N7002K-HF 201006244 d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is universally used for all commercial-industrial applications. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.06 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =450ma - - 2 v gs =4.5v, i d =200ma - - 4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 2.5 v g fs forward transconductance v ds =10v, i d =450ma - 400 - ms i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =48v ,v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge 2 i d =450ma - 1 1.6 nc q gs gate-source charge v ds =50v - 0.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 0.5 - nc t d(on) turn-on delay time 2 v ds =30v - 12 - ns t r rise time i d =450ma - 10 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 56 - ns t f fall time r d =52 -29- ns c iss input capacitance v gs =0v - 32 50 pf c oss output capacitance v ds =25v - 8 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =450ma, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board t Q 10sec; 400 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP2N7002K-HF
a p2n7002k-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g = 3.0 v 0.0 0.2 0.4 0.6 0.8 1.0 0246 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g = 3.0 v 1.0 1.5 2.0 2.5 3.0 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 200m a t a =25 o c 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 450m a v g =10v 0 0.2 0.4 0.6 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 0.9 1.3 1.7 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP2N7002K-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 0.5 1 1.5 2 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 450m a v ds =30v v ds =40v v ds =50v 1 10 100 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.010 0.100 1.000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc 0.0 0.2 0.4 0.6 0.8 1.0 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 400 /w t t
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